PART |
Description |
Maker |
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
IXBH16N170A IXBT16N170A |
Discrete IGBTs High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor Toshiba Corporation
|
IXBH28N170A |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
NTE28 |
Germanium PNP Transistor High Current, High Gain Amplifier
|
NTE[NTE Electronics]
|
NTE213 |
Germanium PNP Transistor High Power, High Gain Amplifier
|
NTE[NTE Electronics]
|
BUD42D-D BUD42D-1 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 4A I(C) | TO-251AA High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
AGB3307 AGB3307S24Q1 |
The AGB3307 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... Gain Block Amplifiers 50-ohm High Linearity Low Noise Wideband Gain Block
|
Anadigics Inc ANADIGICS[ANADIGICS, Inc]
|
2SC5178R-T2 2SC5178R-T1 |
High fT, high gain transistor
|
NEC
|