PART |
Description |
Maker |
AND8139D NL17SV16XV5T2 AND8139 NL17SV00XV5T2 NL17S |
2-Input OR Gate, Ultra-Low Voltage Non Inverting Buffer, Ultra Low Voltage Single 2-Input NOR Gate, Ultra-Low Voltage Single 2-Input NAND Gate, Ultra-Low Voltage ULTRA-LOW VOLTAGE MINIGATE DEVICES SOLVE 1.2 V INTERFACE PROBLEMS
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ONSEMI[ON Semiconductor]
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BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV802 |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开 Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
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BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV402 |
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
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BSI[Brilliance Semiconductor]
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K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44 From old datasheet system 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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SAMSUNG[Samsung semiconductor] Samsung Electronic
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BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) Asynchronous 4M(512Kx8) bits Static RAM
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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor] Brilliance Semiconducto...
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N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit 8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48 8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
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ON Semiconductor
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WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 512K X 8 STANDARD SRAM, 17 ns, CDSO32 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间17ns 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间20ns
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White Electronic Designs Corporation
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MAX6842 MAX6845 MAX6844 MAX6841 MAX6843 MAX6842FUK |
Ultra-Low-Voltage µP Reset Circuits and Voltage Detectors 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5 Ultra-Low-Voltage ?P Reset Circuits and Voltage Detectors
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MAXIM INTEGRATED PRODUCTS INC Maxim Integrated Products, Inc.
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6206-35/BXAJC 6206-45/BXAJC 6206-45/BYAJC 6206-100 |
x8 SRAM Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits High-Voltage, Low-Current Voltage Monitors in SOT Packages Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits x8的SRAM
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ITT, Corp.
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100QE 58PHL 51PBH 51PBHL 11OPS3M 31OPS3M 11OBH3M 3 |
Optoelectronic Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits 4A High Efficiency Switching Regulators Afterburner Chip 8-Digit, Triplexed LCD Decoder Driver Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits 光电 High-Efficiency, Wide Brightness Range, CCFL Backlight Controllers 光电 Low-Power, 8-Channel, Serial 12-Bit ADCs 光电
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ADC Square D by Schneider Electric
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NCP703SN35T1G |
300 mA, Ultra-Low Quiescent Current, IQ 12 A, Ultra-Low Noise, LDO Voltage Regulator
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ON Semiconductor
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