| PART |
Description |
Maker |
| 2N526 2N525 2N527 2N524 |
(2N524 - 2N527) PNP Germanium Transistors
|
Central Semiconductor
|
| AF109R Q60106-X109-R1 |
PNP GERMANIUM RF TRANSISTOR
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NTE158 |
Germanium PNP Transistor Audio Power Amplifier
|
NTE[NTE Electronics]
|
| NTE226 |
Germanium PNP Transistor Audio Power Amp
|
NTE[NTE Electronics]
|
| NTE105 |
Germanium PNP Transistor Audio Power Amp
|
NTE[NTE Electronics]
|
| 1N156 1N158 1N158A |
PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| Q6016-X139 AF139 |
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41 RoHS Compliant: No
PNP GERMANIUM RF TRANSISTOR
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NTE28 |
Germanium PNP Transistor High Current, High Gain Amplifier
|
NTE[NTE Electronics]
|
| AA143 |
Gold Bonded Germanium Diodes 0.04 A, GERMANIUM, SIGNAL DIODE, DO-7
Gold Bonded Germanium Diodes
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2N527 |
PNP germanium transistor for switching and ampli-fier applications in the audio-frequency range
|
New Jersey Semi-Conduct...
|
| BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
| AA113 2-OA95 2-OA90 2-OA91R JAN1N3287X 1N3287R JAN |
65 V, GERMANIUM, SIGNAL DIODE
100 V, GERMANIUM, SIGNAL DIODE
30 V, GERMANIUM, SIGNAL DIODE
6 V, GERMANIUM, SIGNAL DIODE
20 V, GERMANIUM, SIGNAL DIODE
|
MICROSEMI CORP
MICROSEMI CORP-LAWRENCE
|
