PART |
Description |
Maker |
APT2X61D60J APT2X60D60J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 600V 60A
|
ADPOW[Advanced Power Technology]
|
APT2X31D100J APT2X30D100J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1000V 30A
|
ADPOW[Advanced Power Technology]
|
APT2X101D20J APT2X100D20J |
ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 双超快软恢复整流二极 DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 200V 100A
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
TLE5009A16 |
Available as single die and dual die with separate supplies for each die
|
Infineon Technologies A...
|
408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
STE139N65M5 |
N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh(TM) V Power MOSFET in ISOTOP package
|
ST Microelectronics
|
EF9365P EF9366P |
Triple 3-Input NOR Gate; ; Package: Die (Military Visual) Quad 2-Input OR Gate; Temperature Range: -; Package: 14-SBDIP
|
|
APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
STE40NC60 |
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II POWER MOSFET N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh⑩II MOSFET N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?II MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
APT150GT120JR |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package 500V Dual N-Channel MOSFET in a S-6D package 400V Dual N-Channel MOSFET in a S-6D package 500V Dual N-Channel MOSFET in a S-6E package 1000V Dual N-Channel MOSFET in a S-6E package SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6 400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包 10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier Electronic Theatre Controls, Inc. Atmel, Corp.
|