PART |
Description |
Maker |
GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM 12ns 100MHz 32K x 32 1Mb synchronous burst SRAM 10ns 133MHz 32K x 32 1Mb synchronous burst SRAM 9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM 11ns 117MHz 32K x 32 1Mb synchronous burst SRAM 9ns 150MHz 32K x 32 1Mb synchronous burst SRAM 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
A63L73321E-10 A63L73321E-9.5 |
10ns 128K x 32bit synchronous high speed SRAM 9.5ns 128K x 32bit synchronous high speed SRAM
|
AMIC Technology
|
K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643 |
LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3 LED ORANGE DIFFUSED 2X5 RECT CONNECTOR ACCESSORY LED ORG/RED DIFFUSED 2X5MM RECT -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MCM67B518 MCM67B518FN10 MCM67B518FN12 MCM67B518FN9 |
32K x 18 Bit BurstRAM Synchronous Fast Static RAM 32K X 18 CACHE SRAM, PQCC52
|
Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola, Inc]
|
M52D32321A-10BG M52D32321A-7.5BG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
T436432B-7SG T436432B-55SG T436432B-5SG T436432B-6 |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology http:// Taiwan Memory Technolog...
|
KM4132G271BTQR-8 KM4132G271BQR-8 KM4132G271BTQR-10 |
128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
|
Samsung semiconductor
|
K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
T436432B-7S T436432B-7SG T436432B-55SG T436432B-6S |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM 200万32内存12k × 32 x 4Banks同步DRAM
|
TM Technology, Inc.
|
K4M513233C-SDF75 K4M513233C-SDG75 K4M513233C-SN7L |
16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 4M X 32BIT X 4 BANKS MOBILE SDRAM IN 90FBGA
|
SAMSUNG[Samsung semiconductor]
|
K4M28323PH-F K4M28323PH-FC_F K4M28323PH-FE_G K4M28 |
4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
Elite Semiconductor Memory Technology, Inc. Samsung semiconductor
|