| PART |
Description |
Maker |
| HGTG20N100D2 |
20A, 1000V N-Channel IGBT 34 A, 1000 V, N-CHANNEL IGBT, TO-247
20A/ 1000V N-Channel IGBT
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IXDH30N120D1 IXDT30N120D1 IXDH30N120 IXDT30N120 |
IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| IXDN55N120D1 IXDN55N120 |
IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| C4520C0G3F150K110KA-16 |
Commercial Grade ( High Voltage (1000V and over) )
|
TDK Electronics
|
| CGA7L1C0G3F470K160KA |
Automotive Grade ( High Voltage (1000V and over) )
|
TDK Electronics
|
| CGA7L1C0G3F270K160KA |
Automotive Grade ( High Voltage (1000V and over) )
|
TDK Electronics
|
| CGA7G1C0G3F220K110KA |
Automotive Grade ( High Voltage (1000V and over) )
|
TDK Electronics
|
| SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited
Semelab(Magnatec)
|
| HER251 |
Plastic High-Efficiency Rectifiers Reverse Voltage 50 to 1000V Forward Current 2.5A
|
Rugao Dachang Electronics Co., Ltd
|
| HER205G |
Plastic High-Efficiency Rectifiers Reverse Voltage 50 to 1000V Forward Current 2.0A
|
Rugao Dachang Electronics Co., Ltd
|
