| PART |
Description |
Maker |
| IRF252 IRF253 IRF250 IRF254 IRF251 IRFP251 IRFP253 |
HIGH VOLTAGE POWER MOSFET DIE N-CHANNEL ENHANCEMENT MODE HIGH RUGGEDNESS SERIES
|
IXYS[IXYS Corporation]
|
| IRLC1304 2299 |
HEXFET Power MOSFET Die in Wafer Form(晶圆形式的HEXFET 功率MOS场效应管)
From old datasheet system
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| IR2308 IR2308S |
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-lead SOIC package
|
International Rectifier
|
| S2301 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| IXFE80N50 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFL44N60 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IRFC240 |
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
| IXFN39N90NBSP IXFN39N90 |
HiPerFET Power MOSFETs Single MOSFET Die
|
IXYS[IXYS Corporation]
|
| S2308 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| IRFC43N50KB |
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
