| PART |
Description |
Maker |
| 3GWJ42C |
N SCHOTTKY BARRIEF TYPE (HIGH SPEED RECTIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 3GWJ42C |
N SCHOTTKY BARRIEF TYPE (HIGH SPEED RECTIFIER APPLICATIONS)
|
TOSHIBA
|
| RBQ30T65AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101)
|
ROHM
|
| KDR393 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| 1SS42005 1SS420 |
Silicon Epitaxial Schottky Barrier Type High-Speed Switching Applications
|
Toshiba Semiconductor
|
| KDR728E |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| U1FWJ44N |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATIONS
|
TOSHIBA
|
| KDR701S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 5GWJZ47 |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATION
|
TOSHIBA
|
| 1SS388 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application
|
TOSHIBA
|
| 1SS394 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application
|
TOSHIBA
|
