| PART |
Description |
Maker |
| TGA1073A TGA1073A-SCC |
26- 34 GHz Medium Power Amplifier 26000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
|
| SBM52214X SBM52414Z SBM52214G SBM51214G SBM51214N |
Components and FTTx solutions - Tx 1310nm/Rx 1310nm, Medium Power
Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1310 nm Receiving
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
Transceiver
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving
中功率比迪光学标准模1310纳米发光，纳米接1310
|
INFINEON[Infineon Technologies AG]
|
| 2SC2411K 2SC1741S 2SC4097 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Medium Power Transistor (32V, 0.5A)
Medium Power Transistor (32V 0.5A)
Medium Power Transistor (32V/ 0.5A)
|
ROHM[Rohm]
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| DXT2013P5-13 DXT2013P5 DXT2013P5-15 |
100V PNP MEDIUM POWER TRANSISTOR PowerDI垄莽5
100V PNP MEDIUM POWER TRANSISTOR PowerDI庐5
100V PNP MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
| AT-42000 AT-42000-GP4 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power GHz中等功率高达6 GHz的中等功
|
HIROSE ELECTRIC Co., Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| 2SC3420 E000842 |
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1893 E000575 |
TRANSISTOR (STOROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) 晶体管（STOROBE闪光，中等功率放大器应用
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
|
| SF16JZ51 SF16GZ51 |
MEDIUM POWER CONTROL APPLICATIONS
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
