| PART |
Description |
Maker |
| UG42S6442HSG-PL UG42S6442HSG-PH |
16M Bytes (2M x 64 bits) PC100 SDRAM Unbuffered SODIMM
|
Electronic Theatre Controls, Inc.
|
| HYB3164405TL-50 HYB3164405T-50 SIEMENSAG-HYB316540 |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO34
|
SIEMENS AG
|
| EDL5132CBMA-10-E EDL5132CBMA |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
| EDD2516AKTA-6B-E EDD2516AKTA-7A-E EDD2516AKTA-7B-E |
256M bits DDR SDRAM (16M words x 16 bits)
|
Elpida Memory
|
| EDS2516CDTA-75-E EDS2516CDTA |
256M bits SDRAM (16M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
| AS4C1M16E5 |
5V / 3.3V Edo DRAM, 16M, 1Mx16
|
ALLIANCE
|
| MT18LD1672AG-6X |
16M X 72 EDO DRAM MODULE, 60 ns, DMA168
|
|
| T89C51AC2-RLSC-M T89C51AC2-RLSE-M T89C51AC2-RLSI-M |
8-bit MCU with 32K bytes Flash, 10 bits A/D and EEPROM
|
ATMEL Corporation
|
| TC58128AFT |
128-MBIT (16M 】 8 BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| IBM0164405B |
16M x 4 13/11 EDO DRAM(16M x 4 动态RAM（超页面模式并带24条地址线，其中13条为行地址选通，11条为列地址选通）) 1,600 × 4 13/11 EDO公司的DRAM,600 × 4动态随机存储器（超页面模式并带24条地址线，其中13条为行地址选通，11条为列地址选通）
|
International Business Machines, Corp.
|
| LC321667BJ LC321667BM LC321667BT-70 LC321667BT-80 |
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode / Byte Write
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write???
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
