| PART |
Description |
Maker |
| IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
| NTLJF1103P NTLJF1103PT1G |
Power MOSFET Schottky Diode
Power MOSFET and Schottky Diode -8 V, -4.3 A, μCool? P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN
|
ON Semiconductor
|
| FDFS2P102 FAIRCHILDSEMICONDUCTORCORP-FDFS2P102 FDF |
Integrated P-Channel MOSFET and Schottky Diode
FETKEY P-Channel MOSFET with Schottky Diode 3.3 A, 20 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRF7326D2 |
FETKY MOSFET / Schottky Diode
HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
| 2SK3781-01R |
DIODE SCHOTTKY SINGLE 25V 200mW 0.33V-vf 200mA-IFM 2mA-IF 0.5uA-IR SOD-323 3K/REEL 73 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| STS4DNFS30L 8566 STS4DNFS30 |
N-CHANNEL 30V - 0.044 OHM - 4A SO-8 STRIPFET II MOSFET PLUS SCHOTTKY RECTIFIER
N-CHANNEL 30V - 0.044 OHM - 4A SO-8 STRIPFET II MOSFET PLUS SCHOTTKY RECTIFIER
N-CHANNEL 30V - 0.044ohm - 4A SO-8 STripFET⑩ II MOSFET PLUS SCHOTTKY RECTIFIER
From old datasheet system
N-CHANNEL POWER MOSFET
N-CHANNEL 30V - 0.044ohm - 4A SO-8 STripFET?/a> II MOSFET PLUS SCHOTTKY RECTIFIER
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STS4DPFS20L |
P-CHANNEL 20V - 0.07ohm - 4A SO-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER
P-CHANNEL POWER MOSFET
P-CHANNEL 20V - 0.07ohm - 4A SO-8 STripFET⑩ MOSFET PLUS SCHOTTKY RECTIFIER
P-CHANNEL 20V 0.07 OHM 4A SO-8 STRIPFET MOSFET PLUS SCHOTTKY RECTIFIER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| NTMD4184PF NTMD4184PFR2G |
Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode
|
ON Semiconductor
|
| NTLJD3182FZ NTLJD3182FZTAG NTLJD3182FZTBG |
Power MOSFET and Schottky Diode −20 V, −4.0 A, μCool Single P−Channel & Schottky Barrier Diode, ESD
Power MOSFET and Schottky Diode −20 V, −4.0 A, 楼矛Cool垄芒 Single P−Channel & Schottky Barrier Diode, ESD
|
ON Semiconductor
|
| AM29DL800BT70RWBC AM29DL800BB70RSI AM29DL800BT70RS |
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU9343-701 with Lead-Free packaging
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7404 with Lead Free Packaging x8/x16闪存EEPROM
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR5410 with Standard Packaging x8/x16闪存EEPROM
30V FETKY - MOSFET and Schottky Diode in a SO-8 package; A IRF7807D2 with Standard Packaging x8/x16闪存EEPROM
x8/x16 Flash EEPROM x8/x16闪存EEPROM
30V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7807VD1 with Lead Free Packaging
|
Advanced Micro Devices, Inc.
|
| SI6821DQ |
P-Ch, Reduced Qg, Fast Switching MOSFET Schottky Diode
From old datasheet system
P-Channel Reduced Qg / MOSFET with Schottky Diode
P-Channel, Reduced Qg, MOSFET with Schottky Diode P沟道，减Qg和与MOSFET的肖特基二极
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
