| PART |
Description |
Maker |
| 2N6387-D |
Plastic Medium-Power Silicon Transistors
|
ON Semiconductor
|
| BD139 BD135G BD137 BD137G |
Plastic Medium Power Silicon NPN Transistor
|
Rectron Semiconductor
|
| BD159 BD157 BD158 |
Plastic Medium Power NPN Silicon Transistor
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| MJE350 MJE350G |
Plastic Medium Power PNP Silicon Transistor
|
ON Semiconductor
|
| 2N4920G 2N4918 2N4918_04 2N4919 2N4920 |
Medium-Power Plastic PNP Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
| 2N4921 2N4922 2N4923 |
MEDIUM-POWER PLASTIC NPN SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| BD180 BD180G |
Plastic Medium Power Silicon PNP Transistor
|
ON Semiconductor
|
| TIP100 TIP107 |
PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| MJE371-D |
Plastic Medium-Power PNP Silicon Transistors
|
ON Semiconductor
|
| TIP105-13 |
PNP Plastic Medium-Power Silicon Transistors
|
Micro Commercial Compon...
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
