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SGSD310 - 150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor

SGSD310_532557.PDF Datasheet

 
Part No. SGSD310 SGSD311 SGSD311FI
Description 150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor

File Size 293.15K  /  6 Page  

Maker


SGS Thomson Microelectronics
STMicroelectronics



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Part: SGSD100
Maker: ST
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  100: $1.89
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 Full text search : 150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor
 Product Description search : 150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor


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