PART |
Description |
Maker |
K4S51153PF-YF K4S51153PF K4S51153PF-YPF1L K4S51153 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54 From old datasheet system
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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WED2ZL361MV50BC WED2ZL361MV38BC WED2ZL361MV42BC WE |
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,5.0ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,5.0纳秒同步脉冲流水线静态随机存储器(无总线等待时间)) 1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.8ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.8纳秒同步脉冲流水线静态随机存储器(无总线等待时间)) 1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,4.2ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,4.2纳秒同步脉冲流水线静态随机存储器(无总线等待时间)) 1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.5ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.5纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
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Vicor, Corp.
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IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100 25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
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Integrated Device Technology, Inc. IDT
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GS820322T-138 GS82032T-66 GS82032Q-150 GS82032Q-5I |
66MHz 18ns 64K x 32 2M synchronous burst SRAM PROGRAMMER UNIVERSAL 40-PIN 64K x 32 / 2M Synchronous Burst SRAM 64K x 32 2M Synchronous Burst SRAM 64K的32 200万同步突发静态存储器 PROGRAMMER UNIV W/USB 48-PIN 64K的32 200万同步突发静态存储器 .56UF/100VDC METAL POLY CAP 64K的32 200万同步突发静态存储器 64K X 32 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
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N80 K4S511633CNBSP K4S511633C-YL_N80 K4S511633C K4 |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 32Mx16 Mobile SDRAM 54CSP 1/CS 32Mx16移动SDRAM 54CSP 1/CS
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
AS7C33128PFS32B AS7C33128PFS32A |
(AS7C33128PFS32A / AS7C33128PFS36A) 3.3V 128K X 32/36 pipeline burst synchronous SRAM (AS7C33128PFS32B / AS7C33128PFS36B) 3.3V 128K X 32/36 pipeline burst synchronous SRAM
|
Alliance Semiconductor Corporation
|
MBM29BS32LF18 MBM29BT32LF18PBT |
BURST MODE FLASH MEMORY CMOS 32M (2M X 16) BIT 突发模式闪存的CMOS 32M的(2米16)位
|
Spansion, Inc. Spansion Inc. SPANSION LLC
|
IBM13M32734BCD |
32M x 72 2-Bank Registered/Buffered SDRAM Module(32M x 72 2组寄缓冲同步动态RAM模块) 32M × 72配置2,银行注缓冲内存模组2M × 72配置2组寄缓冲同步动态内存模块)
|
IBM Microeletronics International Business Machines, Corp.
|
AS7C251MFT18A AS7C251MFT18A-75TQC AS7C251MFT18A-75 |
2.5V 1M x 18 flowthrough burst synchronous SRAM 1M X 18 STANDARD SRAM, 7.5 ns, PQFP100 2.5V 1M x 18 flowthrough burst synchronous SRAM 1M X 18 STANDARD SRAM, 10 ns, PQFP100 High Speed CMOS Logic Triple 3-Input AND Gates 14-SOIC -55 to 125 Sync SRAM - 2.5V
|
Alliance Semiconductor, Corp. Everlight Electronics Co., Ltd. ALSC Alliance Semiconductor Corporation
|
AS7C33256PFS18B AS7C33256PFS18BV.1.7 AS7C33256PFS1 |
3.3V 256K X 18 pipeline burst synchronous SRAM 3.3 256 × 18管道爆裂同步SRAM 3.3V 256K X 18 pipeline burst synchronous SRAM 256K X 18 STANDARD SRAM, 8 ns, PQFP100 Sync SRAM - 3.3V From old datasheet system
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
KMM374F3280BK |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
IBM11M32735C |
32M x 72 DRAM Module(32M x 72动态RAM模块) 32M × 72配置内存2M × 72配置动态内存模块)
|
International Business Machines, Corp.
|