| PART |
Description |
Maker |
| HN29WB800R-10 HN29WB800R-12 HN29WB800R-8 HN29WB800 |
1048576-WORD X 8-BIT / 524288-WORD X 16-BIT CMOS FLASH MEMORY
|
Hitachi Semiconductor
|
| M5M44400BRT-6S M5M44400BRT-7S |
FAST PAGE MODE 4194304-BIT(1048576-WORD BY 4-BIT)DYNAMIC RAM 快速页面模194304位（1048576 - Word位）动态随机存储器
|
Mitsubishi Electric, Corp.
|
| HN27C4000G-10 HN27C4000G HN27C4000G-15 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM 524288词？8-Bit/262144-Word x 16位的CMOS紫外线可擦除只读存储
524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| MSM538002C |
524288 x 16-Bit or 1048576 x 8-Bit Mask ROM
|
OKI Semiconductor
|
| M2V64S20BTP M2V64S20BTP-10 M2V64S20BTP-10L M2V64S2 |
64M bit Synchronous DRAM
4-BANK x 2097152-WORD x 8-BIT
4-BANK x 1048576-WORD x 16-BIT
4-BANK x 4194304-WORD x 4-BIT
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HN27C4000G |
524288-Word x 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi Semiconductor
|
| M5M5Y816WG-70HI M5M5Y816WG-85HI |
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M5408BFP M5M5408BKR M5M5408BKV M5M5408BRT M5M540 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M5M54R08J-12 M5M54R08J-15 D98025 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V5636UG-16 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5Y5636TG-20 M5M5Y5636TG-25 M5M5Y5636TG-22 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
|
| M5M5V5636GP16 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Mitsubishi Electric Semiconductor
|
