| PART |
Description |
Maker |
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
| BUP202 Q67078-A4401-A2 BUP202SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) 12 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| RJH60F6DPK RJH60F6DPK-00-T0 |
85 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| IXYH30N120C3 IXYP30N120C3 |
High-Speed IGBT for 20-50 kHz Switching
|
IXYS Corporation
|
| RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| RJP60F4DPM RJP60F4DPM-15 |
600 V - 30 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJP60F0DPM RJP60F0DPM-15 |
600 V - 25 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F5DPK10 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH1CF6RDPQ-80 RJH1CF6RDPQ-80-15 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F5BDPQ-A0 |
600V - 40A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH6088BDPK |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
