| PART |
Description |
Maker |
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K9F8008W0M- K9F8008W0M-TCB0 K9F8008W0M-TIB0 K9K120 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
1M x 8 bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| CA20C03A20EP CA20C03A-20IP CA20C03A-20IN CA20C03A2 |
N-CHANNEL 550V @Tjmax - 2.5 Ohm - 3A DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET
Dual 2-input NAND gate
DUAL 2-INPUT OPEN DRAIN NAND GATE
Dual bilateral switch
8-bit MCU with Flash or ROM memory, ADC, two 16-bit timers, I2C, SPI, SCI interfaces
8-bit microcontroller with single voltage Flash memory, data EEPROM, ADC, timers, SPI 数据加密处理
ST7LITE2 - 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI 数据加密处理
Dual 2-input exclusive OR gate 数据加密处理
|
Belden, Inc.
3M Company
|
| KM29W32000AIT KM29W32000AT |
4M x 8-Bit NAND Flash Memory
|
Samsung Semiconductor
|
| KM29V64001TS KM29V64001RS |
8M X 8 BIT NAND FLASH MEMORY
|
Samsung semiconductor
|
| K9K4G08U1M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
SAMSUNG
|
| KM29N16000ATS |
2M x 8 Bit NAND Flash Memory(2M x 8NAND闪速存储器)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9 |
64M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM29N32000IT KM29N32000T |
4M x 8 Bit NAND Flash Memory(4M x 8NAND闪速存储器)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM29U128T |
16M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
