| PART |
Description |
Maker |
| IS42VS16100C1-10T IS42VS16100C1-10TI IS42VS16100C1 |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS45S16100C1-7TLA IS45S16100C1-7TLA1 IS45S16100C1- |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS42S16100C1-6T IS42S16100C1-6TL |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solu...
|
| IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
ETC
|
| IS42S32200E-6TL IS42S32200E-6TLI IS45S32200E-6BLA1 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc
|
| IS42S16128 IS42S16128-10T IS42S16128-12T IS42S1612 |
128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| W981616AH W981616AHB1 |
512 x 2 Banks x 16 Bits SDRAM
512K x 2 BANKS x 16 BIT SDRAM
From old datasheet system
|
Winbond Electronics
|
| K4C89323AF-GCF5 K4C89323AF-GCF6 K4C89323AF-GCFB K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
Samsung semiconductor
|
| EBD11ED8ABFB-6B EBD11ED8ABFB-7B EBD11ED8ABFB-7A |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words ?72 bits, 2 Banks)
|
Elpida Memory
|
| IS42S32200B-6T IS42S32200B-6TL IS42S32200B-6TI IS4 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc.
|
| W9816G6CH W9816G6CH-5 W9816G6CH-6 W9816G6CH-7 |
512K × 2 BANKS × 16 BITS SDRAM
|
Winbond
|
| W9816G6CH W9816G6CH-5 W9816G6CH-6 W9816G6CH-7 |
512K 】 2 BANKS 】 16 BITS SDRAM
|
Winbond
|
