| PART |
Description |
Maker |
| GN1L4Z GN1L4Z-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
| GN1A4M GN1A4M-T2 GN1A4M-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
| GA1L4Z GA1L4Z-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
| 2SD1055 2SD1766 D1758 2SD1758 2SD1919 2SD1862 A580 |
Medium Power Transistor (32V, 2A)
2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Medium Power Transistor 32V/ 2A
Medium Power Transistor 32V, 2A
Medium Power Transistor 32V 2A
From old datasheet system
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| 2SA2091S 2SA2091STPQ |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN
Medium power transistor (60V/ 1A)
Medium power transistor (−60V, −1A)
Medium power transistor (-60V, -1A)
|
TE Connectivity, Ltd.
ROHM[Rohm]
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| STC03DE170HP07 STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| 2SA1036K 2SA854 2SA854S 2SA1577 A5800307 |
Medium Power Transistor (-32V/ -0.5A)
Medium Power Transistor (-32V, -0.5A)
From old datasheet system
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
Rohm
|
| AP1L3N AP1A3M AP1A4A AP1A4M AP1F3P AP1J3P AP1L2Q A |
on-chip resistor NPN silicon epitaxial transistor
Hybrid transistor
|
NEC Corp.
NEC[NEC]
|
| FP1A3M FP1F3P FP1L3N FP1J3P FP1L2Q FP1A4M FP1A4A F |
on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
Hybrid transistor
|
NEC Corp.
NEC[NEC]
|
