| PART |
Description |
Maker |
| CY7C342 CY7C342-25 CY7C342-30 CY7C342-35 CY7C342B |
128-Macrocell MAX EPLDs 128宏单元最EPLDs
128-Macrocell MAX EPLDs OT PLD, 40 ns, PQCC68
128-Macrocell MAX EPLDs OT PLD, 25 ns, PQCC68
128-Macrocell MAX EPLDs UV PLD, 40 ns, CQCC68
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
128-Macrocell MAX® EPLD
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| CY7C372I |
UltraLogic 64-Macrocell Flash CPLD(超逻辑4 宏单闪CPLD)
From old datasheet system
|
Cypress Semiconductor Corp.
|
| CY7C374 |
128-Macrocell Flash CPLD
|
Cypress Semiconductor
|
| XCR3128-15VQ84C XCR3128-15VQ84I XCR3128-15VQ128I X |
XCR3128: 128 Macrocell CPLD XCR312828个宏单元CPLD
XCR3128: 128 Macrocell CPLD EE PLD, 10 ns, PQFP160
XCR3128: 128 Macrocell CPLD EE PLD, 10 ns, PQFP100
XCR3128: 128 Macrocell CPLD EE PLD, 15 ns, PQFP100
XCR3128: 128 Macrocell CPLD XCR3128128个宏单元CPLD
|
Xilinx, Inc.
|
| CY7C346-35RMB CY7C346-35RC CY7C346-35JI CY7C346-35 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
USE ULTRA37000TM FOR ALL NEW DESIGNS(128-Macrocell MAX EPLD)
USE ULTRA37000TM FOR ALL NEW DESIGNS(128-Macrocell MAX EPLD) OT PLD, 75 ns, PQFP100
ECONOLINE: RSZ/P - 1kVDC OT PLD, 75 ns, PQFP100
ECONOLINE: RSZ/P - 1kVDC UV PLD, 75 ns, CPGA100
USE ULTRA37000TM FOR ALL NEW DESIGNS(128-Macrocell MAX EPLD) OT PLD, 52 ns, PQCC84
USE ULTRA37000TM FOR ALL NEW DESIGNS(128-Macrocell MAX EPLD) 使用ULTRA37000TM的所有新设计28宏单元最大可编程逻辑器件
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| XCR3128XL XCR3128XL-7CS144C XCR3128XL-7CS144I XCR3 |
XCR3128XL 128 Macrocell CPLD EE PLD, 7.5 ns, PQFP100
XCR3128XL 128 Macrocell CPLD EE PLD, 6 ns, PBGA144
XCR3128XL 128 Macrocell CPLD EE PLD, 10 ns, PQFP144
T1/E1 Transformer EE PLD, 10 ns, PQFP100
From old datasheet system
|
Xilinx, Inc.
XILINX[Xilinx, Inc]
|
| CY7C346 CY7C346-25 CY7C346-25HC CY7C346-25HI CY7C3 |
USE ULTRA37000TM FOR ALL NEW DESIGNS(128-Macrocell MAX EPLD)
128-Macrocell MAX® EPLD
USE ULTRA37000TM FOR ALL NEW DESIGNS(128-Macrocell MAX EPLD)
|
CYPRESS[Cypress Semiconductor]
|
| HI-8105 HI-8105PST HI-8105PSI HI-8105PDT HI-8105PD |
PROGRAMMABLE DIVIDER WITH OSC OR CLK SPECIALTY LOGIC CIRCUIT, CDIP8
128 MACROCELL 3.3 VOLT ZERO POWER ISP CP - NOT RECOMMENDED for NEW DESIGN SPECIALTY LOGIC CIRCUIT, CDIP8
128 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
256 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
|
HOLT INTEGRATED CIRCUITS INC
Holt Integrated Circuits, Inc.
HOLTIC[Holt Integrated Circuits]
|
| S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位）.0伏的CMOS只同步读/写，页模式闪
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion, Inc.
Spansion Inc.
SPANSION LLC
|
| XC2C32A-4CPG56C XC2C32A-6CPG56C XC2C32A-6CPG56I XC |
32 MACROCELL 1.8V ZERO POWER ISP CPLD FLASH PLD, 4 ns, PBGA56
32 MACROCELL 1.8V ZERO POWER ISP CPLD FLASH PLD, 6 ns, PBGA56
32 MACROCELL 1.8V ZERO POWER ISP CPLD FLASH PLD, 4 ns, PQFP44
|
Xilinx, Inc.
XILINX INC
|
| AM29LV128LH103EI AM29LV128LH103FI AM29LV128LH103PC |
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 100ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 110ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 120ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 90ns
|
Advanced Micro Devices
|
