| PART |
Description |
Maker |
| AS7C33128PFD32_36B AS7C33128PFD36B-200TQIN AS7C331 |
Sync SRAM - 3.3V
LM397 Single General Purpose Voltage Comparator; Package: SOT-23; No of Pins: 5; Qty per Container: 1000; Container: Reel
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 4 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 36 STANDARD SRAM, 4 ns, PQFP100
128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100
128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 3 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 3.5 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 3.3 128K的X 32/36管道爆裂同步SRAM
|
Alliance Semiconductor Corp...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Integrated Silicon Solution, Inc.
|
| CXK77910AYM CXK77910ATM CXK77910ATM_AYM CXK77910AT |
128K X 9 STANDARD SRAM, 6.5 ns, PDSO44
131,072-word by 9-bit High-Speed Synchronous Static RAM
From old datasheet system
|
Sony
|
| MCM63D736 |
128K x 36 Bit Synchronous
Dual I/O, Dual Address SRAM(128K x 36 Bit同步双I/O双地址静态存储器)
|
Motorola, Inc.
|
| AS7C33128NTF32_36B AS7C33128NTF36B-80TQIN AS7C3312 |
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 7.5 ns, PQFP100
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 10 ns, PQFP100
LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail
3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM
LM3916 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: MDIP; No of Pins: 8; Qty per Container: 40; Container: Rail
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| CXK77B3641GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
|
Sony, Corp.
|
| A63L73321E-10 A63L73321E-9.5 |
10ns 128K x 32bit synchronous high speed SRAM
9.5ns 128K x 32bit synchronous high speed SRAM
|
AMIC Technology
|
| IDT71V3558SA133PFGI IDT71V3558SA100BGG IDT71V3558S |
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.3V的I / O的脉冲计数器输出流水
TV 6C 6#12 SKT WALL RECP
Circular Connector; No. of Contacts:41; Series:D38999; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
|
IDT
Integrated Device Technology, Inc.
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| A43L8316V-7 |
128K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
| A43L8316V-10 A43L8316V-8 |
128K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
| CY7C0852V |
3.3V 64K/128K X 36 And 128K/256K X 18 Synchronous Dual-port RAM
|
CYPRESS
|
|
