| PART |
Description |
Maker |
| RF5117 RF5117PCBA |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RFMD[RF Micro Devices]
|
| RF5117C RF5117CPCBA |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RF Micro Devices
|
| RF5117PCBA-41X RF511706 RF5117 |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RFMD[RF Micro Devices]
|
| RFVC1802 RFVC1802PCK-410 RFVC1802S2 |
WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 4GHZ TO 8GHZ
|
http://
RF Micro Devices
|
| TPD02-02G08S |
2-8GHz 2-Way Power Divider
|
Transcom, Inc.
|
| TPD04-01G08S |
1-8GHz 4-Way Power Divider
|
Transcom, Inc.
|
| LT5538 |
40MHz to 3.8GHz RF Power Detector
|
Linear Technology
|
| LT5538IDD-PBF LT5538IDD-TRPBF |
40MHz to 3.8GHz RF Power Detector with 75dB Dynamic Range
|
Linear Technology
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| MGFC36V5258 C365258 |
5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LX5510B LX5510BLQ |
Wireless LAN Power Amplifier; Package: MLPQ16_3x3; 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
|
Microsemi, Corp.
Microsemi Corporation
|
