| PART |
Description |
Maker |
| SSP4N60AS SSP4N60ASJ69Z |
4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Advanced Power MOSFET
Advanced Power MOFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRL3102 IRL3102L |
Advanced Process Technology
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A)
|
IRF[International Rectifier]
|
| IRF2204PBF IRF2204PBF-15 |
75 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
HEXFET? Power MOSFET
Advanced Process Technology
|
International Rectifier
|
| IRFW540 IRFW540A IRFI540A IRFWI540A IRFW540ATM |
Advanced Power MOSFET 28 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
100V N-Channel A-FET
N-CHANNEL POWER MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP9140NPBF IRFP9140NPBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| SSP6N80A SSP6N80AJ69Z |
6 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
Advanced Power MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRLI3705NPBF IRLI3705NPBF-15 |
HEXFET?Power MOSFET
HEXFET㈢Power MOSFET
ADVANCED PROCESS TECHNOLOGY
|
International Rectifier
|
| IRF610A |
Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为1.5Ω，漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| SFP9520 SFP9520NL |
100V P-Channel A-FET / Substitute of IRF9520 6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRLWI620A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
|
