PART |
Description |
Maker |
APT50GP60S |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT25GP90BDF1 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT50GP60B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT45GP120J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT75GP120J |
MOSFET POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
APT26GU30B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT13GP120K |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT75GP120B2 |
MOSFET POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
APT1003RKLL APT1003RKLLG |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel POWER MOS 7 MOSFET MOSFET的功率MOS 7
|
Microsemi Corporation ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
|
APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞???? HEXFET Power MOSFET HEXFET? Power MOSFET 11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier] VISHAY SILICONIX
|
APT65GP60JDQ2 |
POWER MOS 7 IGBT
|
http:// Advanced Power Technology
|