| PART |
Description |
Maker |
| IS42S32800B-7T IS42S32800B-6T IS42S32800B-6BI IS42 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| IS45S16160C |
256 Mb Single Data Rate Synchronous DRAM
|
Integrated Silicon Solution
|
| AS4SD16M16DG-75/IT AS4SD16M16DG-75/XT |
256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| AS4SD16M16DG-75_XT AS4SD16M16 AS4SD16M16DG-75 AS4S |
256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
|
AUSTIN[Austin Semiconductor]
|
| HYB39S256160AT |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
| 42S16800A IS42S81600A IS42S16800A IS42S32400A IS42 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| AM29F002T-90JCB AM29F002T-55EI AM29F002T-55JC AM29 |
FLASH 5V PROM, PDSO32
FLASH 5V PROM, PDIP32
High Speed CMOS Logic Inverting Octal Buffer/Line Drivers with 3-State Outputs 20-CDIP -55 to 125 2兆位56亩8位）的CMOS 5.0伏，只引导扇区闪
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 120 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 2兆位256亩8位）的CMOS 5.0伏，只引导扇区闪
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 55 ns, PDIP32
High Speed CMOS Logic Octal D-Type Flip-Flops with Reset 20-CDIP -55 to 125 256K X 8 FLASH 5V PROM, 55 ns, PQCC32
High Speed CMOS Logic Triple 3-Input NOR Gates 14-CDIP -55 to 125 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 2兆位56亩8位）的CMOS 5.0伏，只引导扇区闪
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
CAP, 180UF, 2V, 20%, 7343-28
High Speed CMOS Logic Non-Inverting Quad 2-Input Multiplexer with 3-State Outputs 16-CDIP -55 to 125
High Speed CMOS Logic Non-Inverting Octal Buffer/Line Drivers with 3-State Outputs 20-CDIP -55 to 125
MB 12C 8#20 4#16 PIN RECP
High Speed CMOS Logic Non-Inverting Octal-Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125
CAP,22uF,12.5VDC,20-% Tol,20 % Tol RoHS Compliant: Yes
High Speed CMOS Logic 8-Bit Addressable Latch 16-CDIP -55 to 125
Am29F002/F002N - 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
LM3075 High Efficiency, Synchronous Current Mode Buck Controller; Package: TSSOP; No of Pins: 20; Qty per Container: 73; Container: Rail
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
|
ADVANCED MICRO DEVICES INC
SPANSION LLC
http://
Advanced Micro Devices, Inc.
ATMEL Corporation
|
| HYB18L256160BCX-7.5 HYE18L256160BCX-7.5 |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Qimonda AG
|
| MT48LC8M16LFTG-75ITG MT48LC8M16LFF4-75ITG MT48LC4M |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 8 MM, VFBGA-54
4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 8 X 13 MM, VFBGA-90
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG
SMSC, Corp.
|
