| PART |
Description |
Maker |
| M5L2764K M5L2764K-2 |
65536 Bit Erasable and Electrically Reprogrammable ROM
65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLT REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
| M5M51016BRT-10LL M5M51016BRT-10L D98007 M5M51016BT |
1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
From old datasheet system
1048576-BIT(65536-16-1048576-BIT(65536-WORD WORDBY BY16-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| SLA24C64 |
64 Kbit (8192 ×8 bit) Serial CMOS-EEPROM with IIC Synchronous 2-Wire Bus(64K(8192 ×8 串行CMOS-EEPROM(带有IIC同步2线控)
|
SIEMENS AG
|
| TC5565AFL-10 TC5565AFL-12 TC5565AFL-15 TC5565APL T |
65536 bit static random access memory organized as 8192 words by 8 bits using CMOS technology
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP |
From old datasheet system
1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-bit (65536-word by 16-bit) CMOS static RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| UPD27C512 |
65536 x 8-Bit CMOS UV EPROM
|
NEC Electronics
|
| CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM
65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group
SONY
|
| CXK5T16100TM-12LLX |
65536-word x 16-bit High Speed CMOS Static RAM
|
SONY
|
| CXK5B16120J CXK5B16120J-12 CXK5B16120TM-12 |
65536-word X 16-bit High Speed Bi-CMOS Static RAM
|
SONY[Sony Corporation]
|
| HN58C65FP-25 |
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
|
http://
|
| SLA24C64-D SLA24C64-D_P SLA24C64-D-3 SLA24C64-D-3_ |
64 Kbit 8192 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus
64 Kbit 8192 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
|
SIEMENS[Siemens Semiconductor Group]
|
