| PART |
Description |
Maker |
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M27W064-110N1T M27W064 M27W064-100M1T M27W064-100N |
64 Mbit 4Mb x16 3V Supply FlexibleROM Memory
64 MBIT (4MB X16) 3V SUPPLY FLEXIBLEROM™ MEMORY
64 MBIT (4MB X16) 3V SUPPLY FLEXIBLEROM?MEMORY
32 Mbit 2Mb x16 3V Supply FlexibleROM Memory
64 Mbit 4Mb x16 3V Supply FlexibleROM⑩ Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器
256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs
Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC
Electronic Theatre Controls, Inc.
|
| GS74104ATP-10 GS74104AJ-10I GS74104AGJ-10 GS74104A |
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO44
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO32
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO32
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO44
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 8 ns, PDSO44
|
GSI Technology, Inc.
|
| RMLV0408E RMLV0408EGSA-5S2 RMLV0414EGSB-5S2 RMLV04 |
4Mb Advanced LPSRAM
|
Renesas Electronics Corporation
|
| GS74104ATJ |
1M x 4 4Mb Asynchronous SRAM
|
GSI Technology
|
| GS74117AX-8I GS74117AX GS74117AX-10 GS74117AX-10I |
256K x 16 4Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
| ID245E01 |
4MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
|
| IBM0418A41BLAB |
(IBM04xxAx1BLAB) 8Mb and 4Mb SRAM
|
IBM Corporation
|
