PART |
Description |
Maker |
GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
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Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
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GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power 1,048,576 words x 16 bit DRAM, 70ns, low power 1,048,576 words x 16 bit DRAM, 60ns, low power x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
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LG Semiconductor
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TC528128B TC528128BJ TC528128BZ |
SILICON GATE CMOS 131,072 WORDS x 8BITS MULTIPORT DRAM
|
Toshiba Semiconductor
|
GM71CS17403C GM71CS17403C-5 GM71CS17403C-6 GM71CS1 |
LED T5.5 24V12.5MA RED RoHS Compliant: Yes 4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor Inc.
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M5M4V64S30ATP-10 M5M4V64S20ATP-8A A98007_A M5M4V64 |
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位) 256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc. ELPIDA MEMORY INC
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CAT93C56JA CAT93C56JE CAT93C56JI CAT93C56KA CAT93C |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS 2K-Bit Microwire Serial EEPROM
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Samsung Semiconductor Co., Ltd. Macronix International Co., Ltd. HIROSE ELECTRIC Co., Ltd. Microchip Technology, Inc. Rohm Co., Ltd. Vicor, Corp. CATALYST[Catalyst Semiconductor] http://
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K4C89323AF-GCFB K4C89323AF-TCF6 K4C89323AF-TCF5 K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HM5117400AS7GS |
CMOS 4194304 WORD 8-BIT DYNAMIC RAM
|
List of Unclassifed Manufacturers
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MH4S64DBKG-8 MH4S64DBKG-7 MH4S64DBKG-8L |
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM CAP USE W/ SERU AU OA BRN 268435456位(4194304 -文字4位)SynchronousDRAM
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time 5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time 5V 256KX16 CMOS DRAM (EDO) 5V 256K?6 CMOS DRAM (EDO) x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO) 5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation ALSC
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