| PART |
Description |
Maker |
| 2SC2484 2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A
SILICON EPITAXAL BASE VLESA TRANSISTOR
|
Panasonic Semiconductor
|
| 2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE
NPN Epitaxial Base Transistor（TO220 Metal PackageNPN外延晶体管（TO220 金属封装，高可靠性）)
DIODE SCHOTTKY SINGLE 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| 2N6290 2N6291 2N6292 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp...
|
| 2N6106 2N6291 |
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corporation
|
| MJ3000 |
60V silicon epitaxial-base darlington
|
Comset Semiconductors
|
| BDX18N |
PNP SILICON TRANSISTORS, EPITAXIAL BASE
|
New Jersey Semi-Conductor P...
|
| BDS10SMD BDS10SMD05 BDS12 BDS12SMD BDS11SMD05 BDS1 |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES
|
Seme LAB
|
| BD20212 |
SILCON EPITAXIAL-BASE POWER TRANSISTORS
|
Comset Semiconductor
|
| TIP111 TIP110 TIP112 TIP112TU |
NPN Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC1622A |
NPN Silicon Epitaxial Transistor
High DC current gain.Collector-base voltage VCBO 120 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| TIP145T |
PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorPNP硅外延达林顿晶体管（内置基极-射极分流电阻单片结构
|
Fairchild Semiconductor Corporation
|
