| PART |
Description |
Maker |
| IXBF12N300 |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBT24N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN2112 |
(ECN2102 / ECN2112) HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| TPD4105AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4113AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| 2EX103K1 |
High Voltage Capacitors Monolithic Ceramic Type
|
Semtech
|
| LT3512HMSPBF LT3512EMSPBF LT3512IMSPBF |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| LS301-14 |
HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS
|
Linear Integrated Syste...
|
| NCP1052ST136T3G NCP1052 NCP1053 NCP1055 NCP1054 NC |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
|
ONSEMI[ON Semiconductor]
|
| IXBH9N140G IXBH9N160G |
Discrete IGBTs
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
