| PART |
Description |
Maker |
| 2SK1310A07 2SK1310A |
TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
|
Toshiba Semiconductor
|
| BLF147 |
VHF power MOS transistor
|
NXP Semiconductors
|
| BLF277 |
VHF power MOS transistor
|
PHILIPS[Philips Semiconductors]
|
| BLF244 BLF244-15 BLF244-2015 |
VHF power MOS transistor
|
Quanzhou Jinmei Electro...
Philips
|
| BLF278 |
VHF push-pull power MOS transistor
|
NXP Semiconductors
|
| BLF202 BLF202_1 |
HF/VHF power MOS transistor
From old datasheet system
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 2SK241 2SK241GR |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA
Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF and RF Amplifier Applications
|
TOSHIBA
|
| 2SK3075 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF .BAND POWER AMPLIFIER
|
TOSHIBA
|
| 2SK1028 |
N CHANNEL MOS TYPE (RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
|
Fuji Electric
Toshiba Semiconductor
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SPB02N60C3 SPP02N60C3 |
for lowest Conduction Losses & fastest Switching
Cool MOS™ Power Transistor
Cool MOS& Power Transistor
Cool MOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
