| PART |
Description |
Maker |
| M57715 M57715R 57715R |
144-148MHz 12.5V /13W /FM MOBILE RADIO
144-148MHz 12.5V,13W,FM MOBILE RADIO
144-148MHZ, 12.5V, 13W, FM MOBILE RADIO
144-148MHz 12.5V13WFM MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M57726R 57726R |
144-148MHz 12.5V /43W /FM MOBILE RADIO
144-148MHz 12.5V,43W,FM MOBILE RADIO
144-148MHZ, 12.5V, 43W, FM MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M67798 M67798LA M67796LA |
144-148MHz / 9.6V / 8W / FM PORTABLE RADIO
RF POWER MODULE 144-148MHz, 9.6V, 8W, FM PORTABLE RADIO
RF power module for 144-148MHz, 9.6V, 8W FM portable radio
|
Mitsubishi Electric Corporation
|
| 73810-1209 |
HDM 144 Pos. Midplane Hsg Pol/Gde 144 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR
|
Molex, Inc.
|
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| APT10M11JVFR |
Power FREDFET; Package: ISOTOP®; ID (A): 144; RDS(on) (Ohms): 0.011; BVDSS (V): 100; 144 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| HYB25M144180C HYB25R144180C HYB25M128160C |
144-Mbit direct RDRAM(144 Mbit 直接 RDRAM)
144-MBit Direct RDRAM(144 M位直接RDRAM) 144兆位的直接的RDRAM144米位直接的RDRAM
128-Mbit direct RDRAM(128 Mbit ?存? RDRAM)
|
SIEMENS AG
|
| A23W8308 A23W8308L A23W8308H A23W8308M |
262,144 X 8 BIT CMOS MASK ROM
120ns/5.0V; 150ns/3.0V 262,144 x 8bit CMOS MASK ROM
|
AMIC Technology
|
| K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HM514260LTT-10 HM514260LTT-7 HM514260LTT-8 HM51426 |
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
| EP4CE30F23C7N EP4CE10E22C7N EP4CE10E22C9L EP4CE10F |
FPGA, 1803 CLBS, 472.5 MHz, PBGA484 23 X 23 MM, 1 MM PITCH, LEAD FREE, FBGA-484
FPGA, 645 CLBS, 472.5 MHz, PQFP144 22 X 22 MM, 0.50 MM PITCH, LEAD FREE, EQFP-144
FPGA, 645 CLBS, 265 MHz, PQFP144 22 X 22 MM, 0.50 MM PITCH, EQFP-144
FPGA, 645 CLBS, 472.5 MHz, PBGA256 17 X 17 MM, 1 MM PITCH, LEAD FREE, FBGA-256
FPGA, 645 CLBS, 472.5 MHz, PQFP144 22 X 22 MM, 0.50 MM PITCH, EQFP-144
FPGA, 645 CLBS, 362 MHz, PQFP144 22 X 22 MM, 0.50 MM PITCH, LEAD FREE, EQFP-144
FPGA, 645 CLBS, 265 MHz, PQFP144 22 X 22 MM, 0.50 MM PITCH, LEAD FREE, EQFP-144
FPGA, 645 CLBS, 362 MHz, PQFP144 22 X 22 MM, 0.50 MM PITCH, EQFP-144
FPGA, 645 CLBS, 472.5 MHz, PBGA256 17 X 17 MM, 1 MM PITCH, FBGA-256
|
Altera International Limited
|
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