| PART |
Description |
Maker |
| TC58DAM72A1FT00 TC58DVM72A1F |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM 128兆位6米x 8 BITS/8M x 16位）的CMOS NAND型E2PROM
(TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
Toshiba, Corp.
|
| W9864G6IH W9864G6IH-7 W9864G6IH-7S W9864G6IH-5 W98 |
1M × 4BANKS × 16BITS SDRAM
|
Winbond
http://
|
| HY5W2B6DLF-HE HY5W2B6DLFP-HE |
4Banks x 2M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| IS42VM16320E |
8M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42VM16200D-75BLI IS42VM16200D-6BLI |
1M x 16Bits x 2Banks Low Power Synchronous DRAM
|
Integrated Silicon Solu...
|
| HY62UF1640 HY62UF16403A HY62UF16403A-I |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62SF16404C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62LF16806A-C HY62LF16806A-I |
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX
|
| EM639165TS-8 ETRONTECHNOLOGYINC-EM639165TS-75L |
8Mega x 16bits SDRAM 8Mega x 16位内
|
Etron Technology, Inc
|
| MAX710 MAX710ESE MAX711 MAX711ESE 1742 MAX711C_D M |
3.3V/5V or Adjustable, Step-Up/Down DC-DC Converters 3.3V/5V或可调、升/降压型DC-DC转换
3.3V/5V or Adjustable, Step-Up/Down DC-DC Converters 0.7 A SWITCHING REGULATOR, UUC16
3.3V/5V or Adjustable / Step-Up/Down DC-DC Converters
From old datasheet system
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
|
