| PART |
Description |
Maker |
| HY5Y7A2DLMP-HF HY5Y7A2DLM-HF |
4Banks x 4M x 32bits Synchronous DRAM
|
http://
Hynix Semiconductor
|
| IS45VM32160E-6BLA1 IS45VM32160E-6BLA2 |
4M x 32Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| W9864G2IB |
512K × 4 BANKS × 32BITS SDRAM
|
Winbond
|
| RMS132AW-10E RMS132AW-6E RMS132AF-6E RMS132AF-75E |
512K x 32Bits x 2Banks Low Power Synchronous DRAM
|
Emerging Memory & Logic Solutions Inc
|
| IS46LR32800G-5BLA1 IS46LR32800G-5BLA2 IS43LR32800G |
2M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
| EMLS232UA EMLS232UAW-6 EMLS232UAW-6E |
512K x 32 x 4Banks Low Power SDRAM Specificaton
|
Emerging Memory & Logic Solutions Inc
|
| SDC1740 SDC1740411B SDC1740412B SDC1740413B SDC174 |
INDUCTOR,2.2UH, 20%, 71.2M OHM MAX DRC, 1.75A IRMS SYNCHRO OR RESOLVER TO DIGITAL CONVERTER, MDIP32
12- and 14-Bit Hybrid Synchro/ Resolver-to-Digital Converters SYNCHRO OR RESOLVER TO DIGITAL CONVERTER, MDIP32
12- and 14-Bit Hybrid Synchro/ Resolver-to-Digital Converters 12 -14位混合同分解到数字转换器
|
ANALOG DEVICES INC
Analog Devices, Inc.
AD[Analog Devices]
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| HSCT-14-H-3-A HRCT-14-H-3-A HRCT-14-H-1-A HSCT-14- |
Synchro & Resolver Signal Conditioner
D-sub connectors, Right angle, Through hole type; HRS No: 211-0313-6 57
Synchro & Resolver Signal Conditioner 同步
|
3M Company
TE Connectivity, Ltd.
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
4M (512K X 8) BIT
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| W9812G2IB |
1M x 4 BANKS x 32BITS SDRAM
|
Winbond
|
