| PART |
Description |
Maker |
| TIG058E8-TL-H TIG058E812 |
N-Channel IGBT Light-Controlling Flash Applications
|
Sanyo Semicon Device
|
| TIG065E8-TL-H TIG065E812 |
N-Channel IGBT Light-Controlling Flash Applications
|
Sanyo Semicon Device
|
| CEEH64 |
Strobe Light Transformer
|
SUMIDA CORPORATION.
|
| 1YA080270 1YA080271 1YL080273 1YL080274 1YL080270 |
SOUNDER SUPER 230VAC
SOUNDER SUPER 24VDC
SOUNDER/STROBE SUPER AMBER
SOUNDER/STROBE RED
SOUNDER/STROBE SUPER RED 测深频闪超级
SOUNDER/STROBE AMBER 测深频闪琥珀
|
PHOENIX CONTACT Deutschland GmbH
|
| GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
| LN66LLN66L LN66L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
|
Panasonic
|
| MMO90-16IO6 |
AC Controlling 1~ full-controlled
|
IXYS Corporation
|
| 2SC4685 E000978 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 467342-4 |
IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION
|
TE Connectivity Ltd
|
| 2-1803016-6 |
IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION
|
TE Connectivity Ltd
|
| 5-1752356-4 |
IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION
|
TE Connectivity Ltd
|
| 2-22281-2 |
IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION
|
TE Connectivity Ltd
|
