| PART |
Description |
Maker |
| WMS128K8-85CM WMS128K8-85CMA WMS128K8-100CC WMS128 |
128Kx8 MONOLITHIC SRAM, SMD 5962-96691
|
WEDC[White Electronic Designs Corporation]
White Electronic Design...
|
| WME128K8-150CI WME128K8-120CMA WME128K8-150CC WME1 |
128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796
|
WEDC[White Electronic Designs Corporation]
|
| EDI88512CA_LPA-B32 EDI88512CA_LPA-C EDI88512CA_LPA |
20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
512Kx8 Monolithic SRAM SMD 5962-95600
512Kx8 Monolithic SRAM, SMD 5962-95600
SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器
55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
|
White Electronic Designs
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| AS7C31024A-10JC AS7C31024A-10JI AS7C31024A-10TC AS |
3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)(3.3V 128KX8 CMOS 静态RAM（改进的引脚
5V/3.3V 128K x 8 CMOS SRAM (Evolutionary Pinout)
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)
|
Alliance Semiconductor Corporation
ETC
|
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
| EDI88512LPAXN36M EDI88512CAXNC EDI88512LPAXNI EDI8 |
512Kx8 Monolithic SRAM, SMD 5962-95600
|
http://
|
| EDI88512CA EDI88512LPAXCB EDI88512LPAXCC EDI88512L |
512Kx8 Monolithic SRAM, SMD 5962-95600
|
WEDC[White Electronic Designs Corporation]
|
| EM6128K800VTA-55F EM6128K1600VTA-55F EM6128K800WTA |
128Kx8 LP SRAM
|
Eorex Corporation
http://
|
| W24L010AJ W24L010AJTQ |
HIGH SPEED SRAM 128Kx8
|
Winbond Electronics
|
| IDT71024S12P |
SRAM,128KX8,CMOS,DIP,32PIN,PLASTIC
From old datasheet system
|
Integrated Device Technology Inc
|
| M65608ENBSP M65608E |
Rad Tolerant 5V 128Kx8 Very Low Power CMOS SRAM
From old datasheet system
|
Atmel Corp
|
| N01M0818L1 N01M0818L1AN N01L0818L1AD-85I N01L0818L |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
