| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| 0910-60M |
60 Watts - 40 Volts, 150us, 5% Radar 890 - 1000 MHz
P-Band 890-1000 MHz; P(out) (W): 60; P(in) (W): 9.5; Gain (dB): 8; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 5; Case Style: 55AW-1 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| HVV0405-175-EK |
UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications
|
HVVi Semiconductors, Inc.
|
| 2SC5544YZ-TR-E 2SC5544YZ-TL-E |
Silicon NPN Epitaxial VHF / UHF wide band amplifier
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.59 MM HEIGHT, MODIFIED SC-89, MFPAK-3
|
Renesas Electronics Corporation
|
| MT6L61AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| TP5025 |
UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
MOTOROLA INC
|
| 2SC2642 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC2783 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3772 |
UHF Oscillator, Mixer, Low-Noise Amp, Wide-Band Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC3776 |
UHF Oscillator, Mixer, Low-Noise Amp, Wide-Band Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| MRF137 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
From old datasheet system
RF POWER FIELD-EFFECT TRANSISTOR
|
ADVANCED SEMICONDUCTOR INC
|
