| PART |
Description |
Maker |
| SST12LP19E-NR |
2.4 GHz High-Gain, High-Efficiency Power Amplifier
|
Microchip Technology
|
| PE15A1005 |
40 dB Gain, 1.5 dB NF, 15 dBm, 1.2 GHz to 1.4 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| SST12LP14A-QVCE-K SST12LP14A SST12LP14A-QVCE |
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| SST12CP11-QVCE |
2.4 GHz High-Power and High-Gain Power Amplifier
|
Microchip Technology
|
| SST12LP08 |
2.4 GHz High-Power, High-Gain Power Amplifier
|
Silicon Storage Technology, Inc
|
| AMMC-5620 AMMC-5620-W10 AMMC-5620-W50 |
Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier
Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier
AMMC-5620 · 6-20 GHz High Gain Amplifier
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| CGD1042HI |
1 GHz, 22 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| LD7262 |
6 GHz / 750 W CW / CONDUCTION COOLING / HIGH POWER GAIN
6 GHz, 750 W CW, CONDUCTION COOLING, HIGH POWER GAIN
|
NEC Corp.
NEC[NEC]
|
| LD7267 |
30 GHz / 100 W CW / CONDUCTION COOLING / HIGH POWER GAIN
30 GHz, 100 W CW, CONDUCTION COOLING, HIGH POWER GAIN
|
NEC
|
| INA-31063 INA-31063-TR1 |
DC-2.5 GHz 3 V, High Isolation Silicon RFIC Amplifier(直流.5 GHz 3 V,高隔离硅射频集成电路放大
3V Fixed Gain. High Isolation amplifier
的DC - 2.5 GHz3伏，高隔离硅射频放大器（直流.5 GHz3伏，高隔离硅射频集成电路放大器）
0 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Agilent(Hewlett-Packard)
AGILENT TECHNOLOGIES INC
|
| Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
