PART |
Description |
Maker |
2N3651 2N3652 2N3650 2N3653 |
35A silicon controlled rectifier. Vrsom 300V. 35A silicon controlled rectifier. Vrsom 400V. 35A silicon controlled rectifier. Vrsom 150V. 35A silicon controlled rectifier. Vrsom 500V.
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General Electric Solid State
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VSKH250-08PBF VSKL250-16 SKT250-04PBF SKT250-08PBF |
Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5 Silicon Controlled Rectifier, 555 A, 1600 V, SCR, MAGN-A-PAK-5 Silicon Controlled Rectifier, 555 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7 Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7 Silicon Controlled Rectifier, 555 A, 1000 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7 Silicon Controlled Rectifier, 377 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5 Silicon Controlled Rectifier, 377 A, 1200 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5 SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A
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Vishay Semiconductors Vishay Siliconix
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NTE5513 NTE5511 NTE5512 |
Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A. Silicon Controlled Rectifier (SCR) 5 Amp
|
NTE[NTE Electronics]
|
TYN058 |
SILICON CONTROLLED RECTIFIER,50V V(DRM) Silicon controlled rectifiers From old datasheet system
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ST Microelectronics
|
2N3670 2N4103 2N3669 2N3668 |
12.5A silicon controlled rectifier. Vrm(non-rep) 330V. 12.5A SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State GE[General Semiconductor] GE Security, Inc.
|
P131 P133 |
Silicon Controlled Rectifier, 28 A, 400 V, SCR Silicon Controlled Rectifier, 28 A, 800 V, SCR
|
Vishay Semiconductors
|
NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A. Silicon Controlled Rectifiers Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
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2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92 Silicon Controlled Rectifier .8A 25V Thyristor .8A 200V Thyristor .8A 50V
|
ONSEMI[ON Semiconductor]
|
1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns) (1N2xxx) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB (1N4525 - 1N4529) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE 100 A, 200 V, SILICON, RECTIFIER DIODE 2200 A, 800 V, SILICON, RECTIFIER DIODE 2200 A, 600 V, SILICON, RECTIFIER DIODE 2200 A, 400 V, SILICON, RECTIFIER DIODE 450 A, 150 V, SILICON, RECTIFIER DIODE 550 A, 50 V, SILICON, RECTIFIER DIODE 550 A, 150 V, SILICON, RECTIFIER DIODE 2500 A, 1300 V, SILICON, RECTIFIER DIODE 300 A, 900 V, SILICON, RECTIFIER DIODE 1800 A, 200 V, SILICON, RECTIFIER DIODE 1200 A, 3100 V, SILICON, RECTIFIER DIODE 2000 A, 2300 V, SILICON, RECTIFIER DIODE 3600 A, 2300 V, SILICON, RECTIFIER DIODE 100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
CS3-16N CS3-16D CS3-16M |
SILICON CONTROLLED RECTIFIER 16 AMP, 200 THRU 800 VOLTS 16 A, 800 V, SCR, TO-3 SILICON CONTROLLED RECTIFIER 16 AMP, 200 THRU 800 VOLTS 16 A, 400 V, SCR, TO-3 SILICON CONTROLLED RECTIFIER 16 AMP, 200 THRU 800 VOLTS 16 A, 600 V, SCR, TO-3
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Central Semiconductor, Corp.
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