PART |
Description |
Maker |
K7N403601A K7N401801A |
256Kx18-Bit Pipelined NtRAMData Sheet 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM 128K × 36
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7B401825B K7B403625B |
128Kx36 & 256Kx18 Synchronous SRAM
|
Samsung semiconductor
|
KM718V847 |
(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM
|
Samsung Semiconductor
|
K7P401822M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
|
Samsung Electronic
|
K7N403601A |
(K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
|
Samsung semiconductor
|
WED2ZL361MV50BC WED2ZL361MV38BC WED2ZL361MV42BC WE |
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,5.0ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,5.0纳秒同步脉冲流水线静态随机存储器(无总线等待时间)) 1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.8ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.8纳秒同步脉冲流水线静态随机存储器(无总线等待时间)) 1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,4.2ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,4.2纳秒同步脉冲流水线静态随机存储器(无总线等待时间)) 1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.5ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.5纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
|
Vicor, Corp.
|
KM718V887 |
256Kx18 Synchronous SRAM
|
Samsung Electronic Samsung semiconductor
|
AS7C33256PFS32A AS7C33256PFS36A AS7C33256PFS32A-16 |
3.3V 256K x 32/36 pipeline burst synchronous SRAM 3.3V 256K x 32 pipeline burst synchronous SRAM, clock speed - 166 MHz
|
Alliance Semiconductor
|
KM736V799 |
128Kx36 Synchronous SRAM
|
Samsung Semiconductor
|
AS7C3256PFS18A-4TQC AS7C3256PFS16A-4TQC AS7C3256PF |
3.3V 256K x 18 pipeline burst synchronous SRAM, 166 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, 133 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, 166 MHz 256K X 18 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 256K X 16 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 256K X 16 STANDARD SRAM, 3.8 ns, PQFP100 3.3V 256K x 16/18 pipeline burst synchronous SRAM 3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, 100 MHz
|
Alliance Semiconductor, Corp. ALLIANCE SEMICONDUCTOR CORP
|
KM736V790 |
128Kx36 Synchronous SRAM From old datasheet system
|
Samsung
|
CY7C1350B-166AC CY7C1350B-133AC CY7C1350B-100AC CY |
128Kx36 Pipelined SRAM with NoBL Architecture
|
CYPRESS[Cypress Semiconductor]
|