PART |
Description |
Maker |
APT1001R1BN APT1001R3BN |
POWER MOS IV 1000V 10.5A 1.10 Ohm / 1000V 10.0A 1.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS LJT 56C 48#20 8#16 PIN RECP Circular Connector; No. of Contacts:56; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No N沟道增强型高压功率MOSFET
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Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
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RF1S4N100SM RFP4N100 FN2457 |
4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs From old datasheet system
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INTERSIL[Intersil Corporation]
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APT10057WVR |
POWER MOS V 1000V 17.3A 0.570 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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APT10050B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 21A 0.500 Ohm
|
Advanced Power Technology
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APT1001R1BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 11A 1.100 Ohm
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Advanced Power Technolo... ADPOW[Advanced Power Technology]
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APT10050JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 19A 0.500 Ohm
|
Advanced Power Technology
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APT1001RBVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 1000V 11A 1.000 Ohm
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Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
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APT10045JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 21A 0.450 Ohm
|
Advanced Power Technology Ltd.
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SF38 SF39 SF310 SF37 |
POWER RECTIFIERS(3.0A,500-1000V)
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MOSPEC[Mospec Semiconductor]
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