PART |
Description |
Maker |
GS840E18AB-190 GS840E18AT-190I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PBGA119 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
IS61NVF12836A IS61NVF12836A-6.5B2 IS61NVF12836A-6. |
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
GS840F32AT-8.5 GS840F36AGT-12 GS840F32AGT-7.5I GS8 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|
GS84032AB-100 GS84032AB-100I GS84032AB-150 GS84032 |
100MHz 12ns 128K x 32 4Mb sync burst SRAM 150MHz 10ns 128K x 32 4Mb sync burst SRAM 166MHz 8.5ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
GS74116A GS74116ATP-10 GS74116AJ-12I GS74116AJ-12I |
256K X 16 STANDARD SRAM, 7 ns, PDSO44 256K x 16 4Mb Asynchronous SRAM 256K × 16 4Mb的异步SRAM RES, MTF 20K 1/4W 2% ER 16C 16#16 SKT PLUG ER 13C 3#8 3#12 7#16 SKT PLUG 10ns 256K X 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 7 ns, PBGA48
|
SRAM Electronic Theatre Controls, Inc. GSI[GSI Technology] N.A. ETC
|
CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization) From old datasheet system
|
Sony
|
IS61VPS12836A IS64LPS25618A |
128K x 32 / 128K x 36- 256K x 18 4Mb SYNCHRONOUS PIPELINED / SINGLE CYCLE DESELECT STATIC RAM 128K x 32/ 128K x 36/ 256K x 18 4 Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution
|
CYD02S36V CYD04S36V CYD09S36V CYD18S36V |
FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步双端口RAM) FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双口RAM(FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双端口RAM)的
|
Cypress Semiconductor Corp.
|
CXK77B3641GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位)
|
Sony, Corp.
|
IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM) 4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的(256 × 18)的SRAMMb的(256 × 18)同步的CMOS静态RAM)的
|
IBM Microeletronics International Business Machines, Corp.
|
IDT71V2577YS75BQI IDT71V2577YS75BGI IDT71V2579S85B |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8 ns, PQFP100 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K的x 36256亩18 3.3同步SRAM.5VI / O的流量通过输出脉冲计数器,单周期取 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8.5 ns, PQFP100 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PBGA119 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PBGA119 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
IDT71V25761 IDT71V25781 IDT71V25781S166PF IDT71V25 |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.5 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.3 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PBGA119 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出,脉冲计数器,单周期取消
|
Integrated Device Technology, Inc.
|
|