| PART |
Description |
Maker |
| A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes
4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corporation
Intel Corp.
|
| E28F004BL-T150 E28F004BL-B150 E28F400BL-T150 PA28F |
4-MBlT (256K x 16/ 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
Series 320 tactile switch with multiple color and cap options
FireWire Current Limiter and Low-Drop ORing Switch Controller 4 MBlT56K × 16。为512k × 8）低功耗启动块闪存系列
4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 4 MBlT56K × 16。为512k × 8）低功耗启动块闪存系列
4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO40
4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO56
|
Intel Corporation
Intel Corp.
Rochester Electronics, LLC
Intel, Corp.
Sharp, Corp.
|
| MBM29LV400BC-55PCV MBM29LV400BC-55PBT MBM29LV400TC |
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT 256K X 16 FLASH 3V PROM, 90 ns, PBGA48
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT 256K X 16 FLASH 3V PROM, 55 ns, PBGA48
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT 256K X 16 FLASH 3V PROM, 70 ns, PBGA48
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
Spansion Inc.
Spansion, Inc.
|
| HY29LV400TT90I HY29LV400BT90I |
4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory 4兆位（为512k × 8/256K × 16）低压快闪记忆体
|
Hynix Semiconductor, Inc.
|
| GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology, Inc.
|
| LH28F400SUB-Z0 LH28F400SUB |
4M (512K 】 8, 256K 】 16) Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| LH28F400SUN-NC60 LH28F400SUN-NC80 LH28F400SUT-NC60 |
4M (512K ??8, 256K ??16) Flash Memory
4M (512K × 8, 256K × 16) Flash Memory
4M (512K 8, 256K 16) Flash Memory
|
Sharp Electrionic Components
Sharp Corporation
|
| MBM29DL400BC-70 MBM29DL400BC-55 MBM29DL400TC-12 MB |
FLASH MEMORY 4M (512K x 8/256K x 16) BIT
|
Fujitsu Microelectronics
|
| AS29LV400 |
3V 512K x 8/256K ?16 CMOS Flash EEPROM
|
ETC
|
