PART |
Description |
Maker |
2SK3591-01MR 2SK3591 |
N-CHANNEL SILICON POWER MOSFET 40 A, 150 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
|
2SK3781-01R |
DIODE SCHOTTKY SINGLE 25V 200mW 0.33V-vf 200mA-IFM 2mA-IF 0.5uA-IR SOD-323 3K/REEL 73 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
|
HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8 Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc. Renesas Electronics Corporation
|
2SK3512-01L 2SK3512-S 2SK3512-SJ 2SK3512 2SK3512-0 |
N-CHANNEL SILICON POWER MOSFET N沟道功率MOSFET MOSFETs 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
|
RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching 3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
2SK4183 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 13 A, 525 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device
|
HAT1021R-EL-E HAT1021R-15 |
5.5 A, 20 V, 0.085 ohm, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
IRFW510A IRFI510ATU IRFW510ATM IRFI510A |
N-CHANNEL POWER MOSFET 100V N-Channel A-FET / Substitute of IRFI510 Advanced Power MOSFET 5.6 A, 100 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
|
2SK3525 2SK3525-01MR |
N CHANNEL SILICON POWER MOSFET XTAL CER SMT 6X3.5 2PAD 8 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
|
RJK0206DPA RJK0206DPA-00-J53 |
70 A, 25 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, WPAK(2), 8 PIN Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
Renesas Electronics Corporation
|
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