| PART |
Description |
Maker |
| MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
NXP Semiconductors N.V.
M/A-COM Technology Solutions, Inc.
|
| MADS-002502-1246HP MADS-002502-1246LP MADS-002502- |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes
|
M/A-COM Technology Solutions, Inc.
|
| MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| U1GWJ2C49 |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| CBS10S30 |
Schottky Barrier Diode Silicon Epitaxial
Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
| U30FWJ2C53M |
Schottky Barrier Rectifier Stack Trench Schottky Barrier Type Low Forward Voltage Schottky Barrier Type Switching Mode Power Supply Application Converter&Chopper Application
|
TOSHIBA
|
| STPSC806 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| STPSC606 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| 5082-2207 50822207 |
SCHOTTKY MEDIUM BARRIER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
From old datasheet system
|
ASI[Advanced Semiconductor]
Advanced Semiconductor, Inc.
|
| U1FWJ44L |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATIONS
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
