PART |
Description |
Maker |
SY10EL34 SY10EL34LZC SY10EL34LZCTR SY10EL34ZC SY10 |
5V/3.3V ÷2,÷4,÷8 Clock Generation Chip(5V/3.3V ÷2,÷4,÷8时钟发生芯片) 5V/3.3V ÷ 2,4,8时钟发生器芯片(5V/3.3V ÷ 2,4,8时钟发生芯片 LED 2MM QUAD YELLOW 10EL SERIES, LOW SKEW CLOCK DRIVER, 3 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO16 5V/3.3V /2 /4 /8 CLOCK GENERATION CHIP 5V/3.3V ±2, ±4, ±8 CLOCK GENERATION CHIP 5V/3.3V 2, 4, 8 CLOCK GENERATION CHIP 5V/3.3V ÷2, ÷4, ÷8 CLOCK GENERATION CHIP
|
Micrel Semiconductor, Inc. MICREL[Micrel Semiconductor]
|
ICM7555CBA ICM7555IBA ICM7556MJD ICM7555 ICM7555IP |
Precision Timing Pulse Generation Sequential Timing Time Delay Generation Pulse Width Modulation Missing Pulse Detector General Purpose Timer, Dual, CMOS Precision Timing Pulse Generation Sequential Timing Time Delay Generation Pulse Width Modulation Missing Pulse Detector 低功耗、通用定时 Precision Timing Pulse Generation Sequential Timing Time Delay Generation Pulse Width Modulation Missing Pulse Detector SQUARE, 1 MHz, TIMER, PDIP8
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
MC100EL34 MC100EL34D MC10EL34 MC10EL34D ON0669 MC1 |
2 / 4 / 8 Clock Generation Chip 2,4,8 Clock Generation Chip 2, 4, 8 Clock Generation Chip From old datasheet system ±2,±4,±8 Clock Generation Chip
|
Motorola, Inc ONSEMI[ON Semiconductor]
|
MC100EP139 MC100EP139DW MC100EP139DWR2 MC100EP139D |
±2/4, ±4./5/6 Clock Generation Chip From old datasheet system 2/4 4./5/6 Clock Generation Chip
|
ONSEMI[ON Semiconductor]
|
APT30GT60AR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 40A The Thunderbolt IGBT is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
STP25NM60N07 STB25NM60N STB25NM60N-1 STF25NM60N ST |
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 600V - 0.140楼? - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET N-channel 600V - 0.140ヘ - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
|
http:// STMicroelectronics
|
APT40GF120JRD |
The Fast IGBTis a new generation of high voltage power IGBTs ⑩的快速IGBT是一种高压IGBT的新一 The Fast IGBT is a new generation of high voltage power IGBTs Fast IGBT & FRED 1200V 60A
|
Advanced Power Technology, Ltd.
|
CY28416 CY28416OXC CY28416OXCT |
Next-Generation FTG for Intel® Architecture Next Generation FTG for Intel-R Architecture
|
Cypress Semiconductor
|
APT20GF120BRD |
Fast IGBT & FRED 1200V 32A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
|
ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
|
DLO-32F-4.5 DLO-32F-3 |
SQUARE, 4.5 MHz, WAVEFORM GENERATION, DIP5 LOW PROFILE, DIP-14/5 SQUARE, 4 MHz, WAVEFORM GENERATION, DIP5 LOW PROFILE, DIP-14/5 SQUARE, 3 MHz, WAVEFORM GENERATION, DIP5
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Data Delay Devices, Inc. DATA DELAY DEVICES INC
|