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MIP0124SY - (MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series

MIP0124SY_423586.PDF Datasheet


 Full text search : (MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series
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SY10EL34 SY10EL34LZC SY10EL34LZCTR SY10EL34ZC SY10 5V/3.3V ÷2,÷4,÷8 Clock Generation Chip(5V/3.3V ÷2,÷4,÷8时钟发生芯片) 5V/3.3V ÷ 2,4,8时钟发生器芯片(5V/3.3V ÷ 2,4,8时钟发生芯片
LED 2MM QUAD YELLOW 10EL SERIES, LOW SKEW CLOCK DRIVER, 3 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO16
5V/3.3V /2 /4 /8 CLOCK GENERATION CHIP
5V/3.3V ±2, ±4, ±8 CLOCK GENERATION CHIP
5V/3.3V 2, 4, 8 CLOCK GENERATION CHIP
5V/3.3V ÷2, ÷4, ÷8 CLOCK GENERATION CHIP
Micrel Semiconductor, Inc.
MICREL[Micrel Semiconductor]
ICM7555CBA ICM7555IBA ICM7556MJD ICM7555 ICM7555IP    Precision Timing Pulse Generation Sequential Timing Time Delay Generation Pulse Width Modulation Missing Pulse Detector
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Precision Timing Pulse Generation Sequential Timing Time Delay Generation Pulse Width Modulation Missing Pulse Detector 低功耗、通用定时
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INTERSIL[Intersil Corporation]
Intersil, Corp.
MC100EL34 MC100EL34D MC10EL34 MC10EL34D ON0669 MC1 2 / 4 / 8 Clock Generation Chip
2,4,8 Clock Generation Chip
2, 4, 8 Clock Generation Chip
From old datasheet system
±2,±4,±8 Clock Generation Chip
Motorola, Inc
ONSEMI[ON Semiconductor]
MC100EP139 MC100EP139DW MC100EP139DWR2 MC100EP139D ±2/4, ±4./5/6 Clock Generation Chip
From old datasheet system
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ONSEMI[ON Semiconductor]
APT30GT60AR The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 40A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
STP25NM60N07 STB25NM60N STB25NM60N-1 STF25NM60N ST N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
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STMicroelectronics
APT40GF120JRD The Fast IGBTis a new generation of high voltage power IGBTs ⑩的快速IGBT是一种高压IGBT的新一
The Fast IGBT is a new generation of high voltage power IGBTs
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CY28416 CY28416OXC CY28416OXCT Next-Generation FTG for Intel® Architecture
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Cypress Semiconductor
APT20GF120BRD Fast IGBT & FRED 1200V 32A
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The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
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Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
ADPOW[Advanced Power Technology]
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Data Delay Devices, Inc.
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