PART |
Description |
Maker |
KMM372V410CS KMM372V400CK KMM372V400CS KMM372V410C |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KMM372C803CK KMM372C803CS KMM372C883CK KMM372C883C |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 5V
|
Samsung Electronic Samsung semiconductor
|
KMM372F3200BS1 KMM372F3280BS1 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic Samsung semiconductor
|
M372F08083DJT0-CEDOMODE |
8M x 72 DRAM DIMM with ECC Using 8M x 8, 4K & 8K Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
KMM372V413CK |
4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V
|
http://
|
HMD16M72D9A-13 HMD16M72D9A-F13 HMD16M72D9A-F12 HMD |
Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit),带ECC内存的基础6Mx8BanksK的参考。,3.3 Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit),带ECC内存的基础16Mx8BanksK的参考。,3.3
|
Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
|
HSD128M72B9K HSD128M72B9K-10 HSD128M72B9K-10L HSD1 |
Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
|
Hanbit Electronics Co.,Ltd http://
|
HSD32M72D18P-10 HSD32M72D18P-10L HSD32M72D18P-12 H |
Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
KMM372F3200BS1 KMM372F3280BS1 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新,3.3
|
Samsung Semiconductor Co., Ltd.
|
M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
HDD32M72B9-13A HDD32M72B9-13B HDD32M72B9-16B |
DDR SDRAM Module 256Mbyte (32Mx72bit), based on32Mx8,4Banks, 8K Ref., ECC Unbuffered SO-DIMM 256MB的DDR SDRAM内存模块2Mx72bit)根据on32Mx8BanksK的参考。,ECC无缓冲的SO - DIMM
|
Hanbit Electronics Co., Ltd.
|