| PART |
Description |
Maker |
| HY57V28820HLT-L |
(HY57V28820HC(L)T-L) 4Banks x 4M x 8bits Synchronous DRAM
|
Hynix Semiconductor
|
| HI3286 |
A/D Converter, 8-Bit, 160MSPS, Input Bandwidth 250MHz, Flash, with PS Power Saving Pin
8Bits 160MSPS, Flash A/D Converter(8浣??60MSPS ???A/D杞????
8Bits 160MSPS, Flash A/D Converter(8位60MSPS 闪存A/D转换
|
Intersil Corporation
|
| SN8P0447Q SN8P0403S SN8P0404K SN8P0406P SN8P0434S |
OPT ROM:4096 16bits / RAM:128 8bits
OPT ROM:4096 16bits , RAM:128 8bits
|
SONIX[SONiX Technology Company]
|
| TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
| HI3276 |
8Bits 160MSPS, Flash A/D Converter(8位60MSPS 闪存A/D转换 860MSPS，闪光的A / D转换器（8位，160MSPS闪存的A / D转换器）
|
Intersil Corporation
Intersil, Corp.
|
| M366S3253BTS-C75 M366S3253BTS |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| D2364 UPD2364 UPD2364-30PC UPD2364-35PC UPD2364-45 |
Search -> UPD2364
ROM 8192 words / 8-Bit
READ ONLY MEMORY 8192 WORDS, 8BITS/WORD
|
NEC Electronics
NEC Corp.
|
| M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx164Banks4K Refresh3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W9864G6IH |
1M X 4BANKS X 16BITS SDRAM
|
Winbond
|
| HY5S6B6D |
(HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM
|
Hynix Semiconductor
|
| HY5Y6B6DLF-HF HY5Y6B6DLF-PF HY5Y6B6DLFP-HF HY5Y6B6 |
4Banks x1M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
