| PART |
Description |
Maker |
| KI4501ADY |
TrenchFET Power MOSFET Drain-Source Voltage Vds 30V
|
TY Semiconductor Co., Ltd
|
| SST5460 SST5462 SST5461 2N5462 2N5460 2N5461 |
P-CHANNEL JFETS
MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.2A; Current, Idm pulse:30A; Power, Pd:1.5W; Resistance, Rds on:0.024R; SMD:1; Charge, gate
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| FDS887607 FDS8876 |
N-Channel PowerTrench? MOSFET 30V, 12.5A, 8.2mΩ
N-Channel PowerTrench庐 MOSFET 30V, 12.5A, 8.2m惟
N-Channel PowerTrench㈢ MOSFET 30V, 12.5A, 8.2mヘ
|
Fairchild Semiconductor
|
| 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| KI4953DY |
100per Rg Tested Drain-Source Voltage Vds -30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| KI4558DY |
PIN Configuration Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| KO3404 |
VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON) 28 m (VGS = 10V)
|
TY Semiconductor Co., Ltd
|
| HP4936DY FN4469 HP4936DYT |
5.8A, 30V, 0.037 Ohm, Dual N-Channel,Logic Level Power MOSFET(5.8A, 30V, 0.037 Ω,双N沟道,逻辑电平功率MOS场效应管) 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET
5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| STS7C4F30L |
7 A, 30 V, 0.026 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
N-CHANNEL 30V - 0.018 ohm - 7A SO-8 P-CHANNEL 30V - 0.070 ohm - 4A SO-8 STripFET⑩ POWER MOSFET
P-CHANEL 30V - 0.027 OHM - 6A SO-8 STRIPFET II POWER MOSFET
N-CHANNEL 30V - 0.018 ohm - 7A SO-8 P-CHANNEL 30V - 0.070 ohm - 4A SO-8 STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STS8C5H30L S8C5H30L |
From old datasheet system
N-CHANNEL 30V -0.018 Ohm - 8A - P-CHANNEL 30V - 0.045 Ohm - 5A - SO-8 LOW GATE CHARGE STRIPFET III MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| FQPF45N03L |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 29A I(D) | TO-220F 晶体管| MOSFET的| N沟道| 30V的五（巴西）直|9A条（丁）|20F
30V LOGIC N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDD044AN03 FDD044AN03L FDU044AN03L |
VARISTOR STD 250VRMS 3225 SMD 35 A, 30 V, 0.0044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
30V N-Channel PowerTrench? MOSFET
30V N-Channel PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
|
