| PART |
Description |
Maker |
| K8D1716UBB-YI07 K8D1716UBB-YI08 K8D1716UBB-YI09 K8 |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory 1,600位（200万x8/1M x16）的双银行NOR闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M29DW324DB70ZA6 M29DW324DB70ZA6F M29DW324DB70ZE6F |
CABLE ASSEMBLY; LEAD-FREE SOLDER; N MALE TO N FEMALE; 50 OHM, RG225/U COAX, DOUBLE SHIELDED
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双66分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双66分，启动3V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双1616分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory
|
SGS Thomson Microelectronics
意法半导
STMicroelectronics N.V.
ST Microelectronics
|
| MBM29DL161BE-90PBT MBM29DL161BE-70TR MBM29DL161BE- |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| AT49LV1614AT AT49BV1614AT-90TI AT49BV1614A-90TI AT |
AT49BV1604A(T)/AT49BV/LV1614A(T) [Updated 3/02. 26 Pages] 16M bit . 2.7-Volt(BV)/ 3.0 - Volt (LV). Sectored Flash. Dual Plane. Top or Bottom Boot
16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 16兆位100万x 16/2M × 8 3伏，只有闪存
|
Atmel Corp.
Atmel, Corp.
|
| MBM29DL164TD-70PFTN MBM29DL162TD-90PBT MBM29DL164T |
1M X 16 FLASH 3V PROM, 90 ns, PDSO48
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
|
FUJITSU LTD
http://
|
| HY29DL163BF-70I HY29DL163BF-12I HY29DL163BF-90I HY |
16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory 1M X 16 FLASH 3V PROM, 120 ns, PBGA48
16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
|
HYNIX SEMICONDUCTOR INC
Advanced Micro Devices, Inc.
Hynix Semiconductor, Inc.
http://
|
| S29GL512N S29GL256N90FFI010 S29GL256N90FFIV20 S29G |
MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 32M X 16 FLASH 3V PROM, 100 ns, PBGA64
JT 13C 13#22M PIN PLUG 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 80 ns, PDSO56
MirrorBit Flash Family MirrorBit闪存系列
Replaced by PTB48520W : 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
JT 13C 13#22D SKT PLUG
|
Spansion, Inc.
Spansion Inc.
ETC
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M58CR064C M58CR064C10ZB6T M58CR064C12ZB6T M58CR064 |
64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M59DR032E-ZFE M59DR032E-ZFT M59DR032E-ZFF M59DR032 |
32 MBIT (2MB X 16, DUAL BANK, PAGE) 1.8V SUPPLY FLASH MEMORY
32 Mbit (2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory
|
ST Microelectronics
意法半导
|
| MBM29DL161BE-70PBT MBM29DL16XTE70 MBM29DL161BE-70T |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
|
Fujitsu Media Devices Limited
SPANSION[SPANSION]
|
| MBM29DL161BE-90TN MBM29DL163BE-70PBT MBM29DL161BE- |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
|
http://
|
